Sensing with extended gate negative capacitance ferroelectric field-effect transistors

With major signal analysis elements situated away from the measuring environment, extended gate (EG) ion-sensitive field effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. This work presents the formulation of a highly sensitive and power-efficient ISFET based on a metal-ferroelectric-insulator gate stack with negative capacitance (NC)-induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected extended gate electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.