Real-Time Temperature Prediction of Power Devices Using an Improved Thermal Equivalent Circuit Model and Application in Power Electronics

As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. The junction temperature prediction guarantees that the IGBT module operates within the safety threshold. The thermal equivalent circuit model is a common approach to predicting junction temperature. However, the model parameters are easily affected by the solder aging. An accurate temperature prediction by the model is impossible during service. This paper proposes an improved thermal equivalent circuit model that can remove the effect of solder aging. Firstly, the solder aging process is monitored in real-time based on the case temperatures. Secondly, the model parameters are corrected by the thermal impedance from chip to baseplate based on the linear thermal characteristic. The simulation and experimental results show that the proposed model can reduce the temperature prediction error by more than 90% under the same aging condition. The proposed method only depends on the case temperatures to correct the model parameters, which is more economical. In addition, the experimental and simulation analysis in this work can help students of power electronics courses have an in-depth knowledge of power devices' mechanical structure, heat dissipation principles, temperature distribution, junction temperature monitoring, and so on.