Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities
CoRR(2024)
摘要
Flash memory has been widely adopted as stand-alone memory and embedded
memory due to its robust reliability. However, the limited endurance obstacles
its further applications in storage class memory (SCM) and to proceed
endurance-required computing-in-memory (CIM) tasks. In this work, the
optimization strategies have been studied to tackle this concern. It is shown
that by adopting the channel hot electrons injection (CHEI) and hot hole
injection (HHI) to implement program/erase (PE) cycling together with a
balanced memory window (MW) at the high-Vth (HV) mode, impressively, the
endurance can be greatly extended to 1010 PE cycles, which is a record-high
value in flash memory. Moreover, by using the proposed electric-field-assisted
relaxation (EAR) scheme, the degradation of flash cells can be well suppressed
with better subthreshold swings (SS) and lower leakage currents (sub-10pA after
1010 PE cycles). Our results shed light on the optimization strategy of flash
memory to serve as SCM and implementendurance-required CIM tasks.
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