Effect of molar concentration on optoelectronic properties of NiO nanoparticles for p-n junction diode application

In this work, fine nickel oxide nanoparticles (NiO NPs) were successfully made utilizing a straightforward co-precipitation approach at low temperature. The effects of precursor concentration on the structural, optical, and electrical characteristics of NiO nanoparticles were investigated. All indexed diffraction peaks in XRD demonstrate the production of NiO with cubic structure. An increase in NiO crystallite size above 16.8 nm was observed when the precursor concentration exceeds 2 M, suggesting the presence of nanostructure in the final product. In FT-Raman spectra, the band centered at similar to 500 cm(-1) is due to Ni-O stretching (LO) mode, and twomagnon (2 M) scattering mode causes the band at 1514 cm(-1). The synthesized product is composed of almost rod-shaped particles with a size range of 10-20 nm, according to FESEM pictures. The UV absorption studies showed a high absorption at the fundamental absorption edges originating at 332 nm, which gradually shifted to a lower energy region up to 400 nm with increasing precursor concentration, which means a reduction in bandgap values. The effect of precursor concentration associated with the electrical characteristics of the produced NiO nanoparticles has been investigated for the temperature range 30 to 130 degree celsius. The I-V characterization was used to compute the different photo-diode parameters including n, Phi(B), I-o, P-S, R, QE, and D* . The remarkable high photosensitivity of 1100% and specific detectivity of 4.324 x 10(-10) Jones for the diode evaluated at 120 mW/cm(2) was observed in a 2 M fabricated diode. These findings imply that all the fabricated diodes are exceptionally light-sensitive and are well-suited for upcoming UV photodetector applications.