Study on the Influence of Fin Width on the Characteristics of T-Gate Fin HEMT

In this paper, the influence of Fin width (WFin) on the characteristics of T -Gate Fin HEMT is studied, and 3D simulation of AlGaN/GaN heterojunction T-Gate Fin HEMT is carried out on TCAD simulation tool. The output, transfer and transconductance characteristics of devices with Fin width of 500nm, 200nm, and 100nm, and the Fin width accounts for 50% of the total width are analyzed respectively. The drain current (I ds ) at Vgs=0V, Vds=6V are 1030mA/mm, 1000mA/mm, 800mA/mm respectively. The threshold voltages (Vth) at Vds=6V are -4.9V, -3.8V and -2.5V, the transconductance peaks are 235mS/mm, 300mS/mm and 300mS/mm, and the gate voltage swings (GVS) are 4.0V, 3.8V and 3.7V respectively. In this device, as the Fin width is reduced, the on-resistance decreases, but the current at V gs=0V decreases, and the Vth positive drift. Although the GVS is reduced, the transconductance peak value is significantly increased.