Precise characterization of a silicon carbide waveguide fiber interface
arxiv(2024)
摘要
Emitters in high refractive index materials like 4H-SiC suffer from reduced
detection of photons because of losses caused by total internal reflection.
Thus, integration into efficient nanophotonic structures which couple the
emission of photons to a well defined waveguide mode can significantly enhance
the photon detection efficiency. In addition, interfacing this waveguide to a
classical fiber network is of similar importance to detect the photons and
perform experiments. Here, we show a waveguide fiber interface in SiC. By
careful measurements we determine efficiencies exceeding 93
of photons from SiC nanobeams to fibers. We use this interface to create a
bright single photon source based on waveguide integrated V2 defects in 4H-SiC
and achieve an overall photon count rate of 181 kilo-counts per second. We
observe and quantify the strain induced shift of the ground state spin states
and demonstrate coherent control of the electron spin with a coherence time of
T2=42.5 μs.
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