Physics-based Compact Model of SiC MOSFET for Cryogenic Performance Prediction

With the development of electrified aircraft research, the operation of power converters at cryogenic temperature is increasing. Developing an effective method to analyze the performance of SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) at cryogenic temperatures is crucial. However, the existing data sheets can only provide performance curves at around -50°C, and more tedious tests are required to obtain performance parameters at lower temperatures. This paper proposes a physics-based compact model of SiC MOSFETs which can directly predict performance at cryogenic temperature. Model parameters are identified by progressed genetic algorithm and simulated in MATLAB/Simulink to demonstrate the static and dynamic characteristics of power devices. Finally, double pulse test circuit are conducted to test dynamic characteristics of a single 1.2 kV/38A SiC MOSFET power module at -100°C (173K).