Micron Channel Length ZnO Thin Film Transistors with Different Gate Dielectric Thicknesses Based on Electronic Design Automation Tools

To drive Micro-LEDs, we design ZnO TFTs using Cu/Ti electrodes by TCAD. The proposed ZnO TFTs with 200 and 500 cycles of gate dielectric were fabricated by atomic layer deposition. The improvement in the SS degradation, V TH roll-off and low I ON /I OFF ratio is significant for ZnO TFTs with shorter channel lengths and thinner gate dielectric, which can be attributed to higher current density, electric field and the localization of transmission eigenstates based on first-principle calculations.