Analysis and Simulation of the Formation and Dimensions of Gate-Defined Double Quantum Dots

In this article, the surface potential in the metal-oxide-silicon structure caused by the applying voltage to an array of electrodes is investigated. These patterned electrodes are two-dimensionally placed on the gate oxide. Moreover, by solving Poisson's equation and considering the depletion approximation, the necessary conditions for the formation of two quantum dots inside the two-dimensional electron gas are presented. The validation of the analysis is done by comparing the simulation results with a reference structure. Finally, we show that our method provides the possibility of calculating the threshold voltage for the formation of quantum dots, as well as their exact dimensions and distance according to the biases of the gate array.