Electrostatic gating dependent multiple band alignments in ferroelectric VS₂/Ga₂O₃ van der Waals heterostructures

Yaxin Zhu, Zhigang Qu,Xiaoteng Wang,Jishun Zhang,Zuheng Wu,Zuyu Xu,Fei Yang,Jun Wang, Yong Dai

Physical Chemistry Chemical Physics（2023）

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摘要

In a 2D VS 2 /Ga 2 O 3 vdW ferroelectric heterostructure, a band structure reversion between the half-metal and semiconductor and electrostatic gating dependent multiple band alignments was realized, showing great potential in ferroelectric memories.

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ferroelectric vs2/ga2o3,dependent multiple band alignments

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Electrostatic gating dependent multiple band alignments in ferroelectric VS2/Ga2O3 van der Waals heterostructures

Electrostatic gating dependent multiple band alignments in ferroelectric VS₂/Ga₂O₃ van der Waals heterostructures