Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs
Advanced electronic materials(2023)
摘要
Abstract Recently, 2D materials have been intensively investigated for their novel nanoelectronic applications; among these materials, tungsten diselenide (WSe 2 ) is attracting substantial research interest due to its high mobility, sizable bandgap, and ambipolar characteristics. However, Fermi‐level pinning (FLP) at the metal–semiconductor contact is a critical issue preventing further integration of WSe 2 to complementary metal–oxide–semiconductor (CMOS) technology. In this study, a facile doping method of oxygen (O 2 ) plasma treatment and an aging effect to overcome the FLP of WSe 2 field‐effect transistors (FETs) are utilized. After aging, a reduction is observed in FLP on oxidized WSe 2 FETs, along with a decrease in pinning factor ( S ) for holes from −0.06 to −0.36. Further, the field‐effect mobility of high‐ (Pd) and low‐ (In) work‐function contacted WSe 2 devices indicates the presence of more improvement in high‐work‐function metal‐contacted p‐type WSe 2 FETs, which further strengthens the Fermi level de‐pinning behavior attributed to the O 2 plasma and aging processes. The existence of different tunneling behaviors of Pd and In devices also confirms the effect of O 2 plasma doping into WSe 2 FETs. Ultimately, this work demonstrates a simple and efficient method for achieving the de‐pinning of Fermi‐levels and modulating FLP of 2D FETs.
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关键词
metal–semiconductor interface,oxygen plasma treatment,wse<sub>2</sub>
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