Back Cover: Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures (Adv. Quantum Technol. 11/2023)

In article number 2300099 by Vladimir M. Shalaev and co-workers, the fundamental photophysical properties of intrinsic single-photon emitters in silicon nitride are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. The cover shows a confocal microscope exciting single-photon emitters in silicon nitride. The emitters are represented as blue dots and the emitted photons are shown as blue wave packets. The thermometer and “4K” text indicate that these are cryogenic measurements. Finally, the inset figure shows the change in emission properties as the emitters are cooled down to low temperatures.