Effects of electron–phonon interactions on electrical transport properties of GaAs/GaAlAs semiconductor heterostructure

The effects of electron–phonon coupling, and band bending are studied in a quasi-one-dimensional (1D) heterostructure consisting of two different doping concentration layers attached between two ideal semi-infinite electrodes, theoretically. The layers are composed two types of material Ga1−c1Alc1As (with Al doping concentration c1) and Ga1−c2Alc2As (with Al doping concentration c2), which c1≤c2. We use the Green’s function method within the framework of the tight-binding approximation to calculate the electrical transport properties in the coherent regime. The transmission spectrum and also the electrical transport properties are investigated for incident electrons by varying the doping concentration and structural parameters. By modifying these parameters, we found the bandgaps, saddle-like behavior and resonance energies of the system in the transmission spectrum. This causes to allow or forbid the transmission of electrons in certain energy ranges. The numerical results can support the choice of suitable parameters to design and fabricate nano-energy filter devices for specific purposes.