Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10 -9 Ω.cm 2 Contact Resistivity in Nonplanar FETs. N. Breil, B.-C. Lee, J. Avila Avendano, J. Jewell, M. Vellaikal, E. Newman,E. M. Bazizi, A. Pal, L. Liu,Oleg Gluschenkov, A. Greene, S. Mochizuki,Nicolas Loubet, B. Colombeau, B. HaranSymposium on VLSI Circuits（2023）引用 0|浏览3暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
