Growth of GaAs/GaNAs/GaAs Core-Multishell Nanowires Lasing at $1\mu \mathrm{m}$

We demonstrate the molecular beam epitaxial growth of high quality GaAs/GaNAs/GaAs core-multishell nanowire containing 2% nitrogen in the GaNAs shell layer. The transmission microscopy investigation shows clear formation of the core-multishell structure without detectable deformations. We observe lasing peak near 1 μm sustaining its lasing behavior up to over 100 K. These results demonstrate that the utilized structure represents a promising alternative for achieving room-temperature near-infrared nanowire lasers.