Source/Drain Engineering by Tantalum Nitride (TaNx) Electrode for Boosting OSFET Performance

N. Okuno, Y. Sato, Y. Jimbo, H. Honda,M. Kurata, M. Wakuda,H. Kunitake, M. Kobayashi, S. Yamazaki

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

For scaling down of FETs using oxide semiconductors, the control of donor concentration in semiconductor films is essential. High performance and reliable device characteristics of scaled FETs were achieved through adjustments of the material for source and drain (S/D) electrodes and their deposition conditions. In this work, tantalum nitride (TaN x ) was used for S/D electrodes, and FETs achieved high on-current (Ion) by studying and optimizing the effect of composition ratio and compressive stress in TaN x .

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关键词

donor concentration,semiconductor films,reliable device characteristics,tantalum nitride electrode,boosting OSFET performance,oxide semiconductors,source and drain electrodes,TaN

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