Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array

2021 IEEE International Electron Devices Meeting (IEDM)(2021)

引用 5|浏览0
暂无评分
摘要
For the first time, we demonstrated a unified approach to combine TRNG and PUF function in a 4-layer 3D threshold switching (TS) NbO x array. The dynamic TS variations and static leakage current mismatch is utilized for TRNG and PUF entropy. By digitizing the stochastic oscillator periods induced by thermal noise during TS process, the proposed TRNG presents the ultra-low energy consumption of 0.75 pJ/bit at 2.0 V, and excellent immunity against power noise attack (frequency range up to 400MHz, and amplitude range up to 600mV), which are verified by the NIST SP800-90B and NIST SP800-22 tests. Meanwhile, the proposed PUF has achieved: (i) high PUF key density per unit area (2F2/bit) for 4-layer stacking; (ii) low native bit error rate (1.35%), ideal un-biased normal distribution of inter-die (0.49971) and intra-die (0.00039) hamming distances (HDs); (iii) excellent resistance against machine learning attack. This work provided an excellent hardware solution for low-cost secure integrated systems.
更多
查看译文
关键词
4-layer stacking 3D threshold switching array,attack resilient 2F2/bit PUF,dynamic TS variations,high PUF key density,ideal unbiased normal distribution,inter-die Hamming distances,intra-die Hamming distances,low native bit error rate,low-cost secure integrated systems,machine learning attack,NbOx/int,NIST SP800-22 tests,NIST SP800-90B,physically unclonable functions,power noise attack,PUF entropy,PUF function,robust hardware security solutions,static leakage current mismatch,stochastic oscillator periods,thermal noise,true random number generators,TS process,ultra-low energy consumption,unified TRNG,unified approach,voltage 2.0 V
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要