Current-induced Néel order switching facilitated by magnetic phase transition

Antiferromagnetic materials (AFMs), which have zero-stray field and the THz-range magnetic resonance frequency, are promising candidates for the next-generation magnetic memory technology. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 10 ⁶ A cm ^-2 facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. The spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density by introducing a transient FM state via current-induced Joule heating. This work demonstrates the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway toward pure AFM memory applications.