Electrically-Pumped 1.31 μm MQW Lasers by Direct Epitaxy on Wafer-Bonded InP-on-SOI Substrate

Yingtao Hu,Di Liang,Chong Zhang,Geza Kurczveil,Xue Huang,Kunal Mukherjee,Raymond Beausoleil

2018 IEEE Photonics Conference (IPC)（2018）

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摘要

We present room-temperature continuous-wave lasing of 1.31 μm multi-quantum well lasers by direct epitaxy on a wafer-bonded InP-on-SOI substrate. The grown laser structure shows significantly low dislocation density of 9.5×10 ⁴ cm ⁻² , leading to a minimal threshold current density of 813 A/cm ² .

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关键词

lasers,silicon photonics,quantum well laser

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