Electrical switching of Ge2 Sb2 Te5 memory cells based on silicon photonic waveguide microheaters
2022 Conference on Lasers and Electro-Optics (CLEO)(2022)
摘要
We demonstrate binary and multilevel electrical programming of the phase change material Ge
2
Sb
2
Te
5
(GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.
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关键词
ion-implanted silicon-on-insulator waveguide microheaters,GST cells,low-amplitude electric pulses,electrical switching,silicon photonic waveguide microheaters,binary programming,multilevel electrical programming,phase change material Ge2Sb2Te5 memory cells
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