First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors

S. Vaziri, I. M. Datye, E. Ambrosi,A. I. Khan, H. Kwon, C. H. Wu, C. F. Hsu, J. Guy,T. Y. Lee, H.-S. P. Wong, X. Y. Bao

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)(2022)

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摘要
Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (V th = 1.1 V – 1.5 V) and low off-current (I off ~ 3 nA at 0.5 V for V th = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >10 8 cycles.
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关键词
high-density one-selector-one-resistor,traditional chalcogenide-based threshold selectors,stable silicon oxide matrix,tunable first fire voltage,SiOTe selectors,voltage compatibility,thermal stability,electrodes,temperature 300.0 degC,SiOxTey,SiO2
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