Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2 FETs With NH3 Plasma Treatment Featuring High Footprint Current

Stacked gate-all-around (GAA) nanosheet (NS) channel $\mathbf{ferroelectric-Hf}_{\mathrm{x}}\mathbf{Zr_1}_{-\mathrm{x}}\mathbf{O}_{2}$ (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and $\mathbf{ZrO}_{2}/\mathbf{TiN}$ interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies $(\mathrm{V}_{\mathrm{o}})$ and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 $\mu \mathbf{A}/\mu \mathbf{m}$ , and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.