Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment

A rapid remote plasma oxidation (RRPO) treatment was applied on the alloy-like oxygen-adsorbing hafnium nitride interfacial layer in Ge nMOSFET device. The sample with a RRPO treatment for 10 s exhibits lower EOT, $\mathrm{J}_{\mathrm{G}}, \mathrm{D}_{\text{IT}}$ , S.S. values, narrower frequency dispersion, higher $\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}, \mathrm{I}_{\text{ON}}$ and $\mathrm{G}_{\mathrm{m}}$ values, due to the reduction of border trap and oxygen vacancy.