Fundamental Balanced Mixer Module for 300-GHz Band Based on Fermi-Level Managed Barrier Diode on SiC Platform

Hiroshi Ito,Yuma Kawamoto,Takahiro Ohara,Tadao Nagatsuma,Tadao Ishibashi

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)（2023）

引用 1|浏览0

暂无评分

摘要

A fundamental balanced mixer module for operation in the 300-GHz band was developed using an epi-layer-transferred Fermi-level managed barrier diode on a SiC substrate. The fabricated module exhibited an intermediate frequency bandwidth of about 26 GHz for a local oscillator signal at 280 GHz with a good port isolation of more than 13 dB.

查看译文

关键词

epilayer-transferred Fermi-level managed barrier diode,Fermi-level managed barrier diode,frequency 280.0 GHz,frequency 300 GHz,fundamental balanced mixer module,local oscillator signal,SiC/int,SiC/sur

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要