Light and Force Multifunctional Detector Based on the Interfacial Polarization of the ITO/MAPbBr₃ Schottky Junction

The MAPbBr(3) halide perovskite with a cubic paraelectric phase exhibits excellent semiconductor properties. Here, an interfacial polarization (P-in) at the ITO/MAPbBr(3) Schottky junction can largely enhance photovoltaic current and be applied in the light and force multifunctional detector. An external force can alter the P-in and increase the photocurrent of the ITO/MAPbBr(3)/spiro-OMeTAD/ITO detector, and a 1 N force increases the short-circuit photocurrent by 120%. Furthermore, the ITO/MAPbBr(3)/ITO structure with one ITO surface in light and another ITO surface in dark exhibits an equivalent piezoelectric coefficient (d(33)) of up to 83 pC N-1 since the P-in and the corresponding photovoltaic current dynamically change with periodic external force. The light and force multifunctional detectors will promote the development and blend of optoelectronic devices and MEMS.