The thickness and width of the intrinsic region effected electrical properties of GaAs p-i-n photodiodes

The thickness of the p-i-n photodiode's p and n contacts, as well as the width of the semiconductor device, affect the conductivity performance of the diode. In this study, the impact of thickness and width variations of GaAs p -i-n photodiode devices on their performance was investigated using the COMSOL Multiphysics software, which enables simulations of multiple physical fields. The terminal current and field strength at various positions were calculated for different thickness and width values. The mechanisms behind the influence of thickness and width variations on the conductivity performance were explained, and a detailed description of the distribution of terminal current and electric field magnitude was provided. Based on experimental data, the optimal thickness and width for achieving peak conductivity performance of the diode under material-saving conditions were determined, providing theoretical guidance for the preparation of efficient and stable GaAs p-i-n photodiodes.