Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain

The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heter-ojunction make it become a promising candidate for the electronic devices.