A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Solid-State Electronics(2023)

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摘要
•Scaling and controlling the synaptic current is indispensable for integrating emerging non-volatile memories (eNVMs) into different grids and design choices of advanced CMOS Technology nodes.•The maximum current scaling down factor depends on the leakage current of the spiking neuron, and the saturation conditions of the current source of the transconductance amplifier.•The fan-in of the 28 nm FD-SOI analog spiking neuron depends on the eNVMs technology, the width and amplitude of input spikes, the firing threshold of the neuron, and the current scaling down factor.•The tunable and versatile current attenuator allows the integration of various eNVMs into 28 nm FD-SOI technology based analog spiking neural networks.
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关键词
UTBB 28nm FD-SOI,Analog SNN,Analog eNVM,eNVM integration
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