Analysis of current sharing of paralleling SiC MOSFETs in SSPC

Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. SiC MOSFETS in SSPC are mostly used in parallel. In this paper, SiC MOSFET is modeled and the parasitic parameters are extracted through double-pulse testing. The influence of device characteristics and parasitic parameters on the parallel steady-state and dynamic current sharing under steady-state and static conditions is analyzed, and the influence of unbalanced current-sharing on the junction temperature under parallel connection is revealed.