Design and demonstration of Cu/Al₂O₃/Cu RRAM with complementary resistance switching characteristic

Huanmei Yuan,Yang Chai,Shunqi Dai,Cristine Jin Estrada,Yuqing Zhang, Annan Xiong,Hao Bai,Guangyu Du,Songhua Cai,Zhimin Li,Songcen Xu,Mansun Chan

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM（2023）

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摘要

To overcome the crosstalk problem originating from the sneak path current, a simple structure of Cu/Al2O3 /Cu memristor was fabricated in this paper. Results showed that the device presented good bipolar resistive switching characteristic (BRS) as well as the endurance and retention performance. Most importantly, the complimentary resistance switching characteristic (CRS) appeared in this device by adjusting the testing parameters, which is important in crossbar array applications.

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crosstalk problem,memristor,BRS and CRS

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Design and demonstration of Cu/Al2O3/Cu RRAM with complementary resistance switching characteristic

Design and demonstration of Cu/Al₂O₃/Cu RRAM with complementary resistance switching characteristic