Individual Control of Characteristics of Vertically Stacked Silicon Quantum Dots
2023 SILICON NANOELECTRONICS WORKSHOP, SNW(2023)
摘要
An individual readout method of vertically stacked silicon quantum bits is investigated in measurements and simulation. It is confirmed by measurement that the quantum dot characteristics in single layer quantum dots are well controlled by the global top gate. It also found by simulation that the characteristics of two quantum dots in vertically stacked silicon quantum dots are also individually controlled by the global top gate.
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