Forming-Free Resistive Switching by Lateral Ag Ion Migration on MoS2

We present forming-free volatile resistive switching (RS) in lateral Ag-MoS2-Pd structures with micron-sized electrode gaps. Our devices exhibit highly repeatable volatile RS at switching voltages similar to 2 V, reasonably fast switching within similar to 6 mu s at 5 V, and maintain volatile behavior at comparatively higher current compliance (100 mu A) than other similar lateral RS devices.