CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p-n Junction for Photovoltaic Enhancement

Herein, the CuI/BaSnO3 quantum dot (QD)/ZnSnO3 perovskite-based transparent p-n junction was preparedusinga hybrid approach involving sol-gel, freeze-drying, annealing,and sputtering. The resulting CuI/BaSnO3 QD/ZnSnO3 p-n junction exhibited a transmittance of & SIM;85% anda photovoltaic enhancement of & SIM;2.6 x 10(3) folds,resulting in a photovoltaic conversion efficiency of & SIM;1.13%.The p-n junction also demonstrated stable output over a 5-monthcycle. This remarkable performance can be mainly attributed to thehomologous perovskite BaSnO3 QD, which facilitated theattainment of an appropriate Fermi level and high quantum yield, optimizingcarrier equilibrium while maintaining high transparency and providingbetter lattice matching. Furthermore, the presence of additional hole-relatedcarriers caused by Cu vacancy allowed the effective utilization ofdefects to optimize kinetic equilibrium. Additionally, the intrinsichigh physical and chemical stability of the inorganic perovskitesBaSnO(3) QD and ZnSnO3 could improve intrinsicstability.