Native Approach to Controlled-Z Gates in Inductively Coupled Fluxonium Qubits

Xizheng Ma,Gengyan Zhang,Feng Wu,Feng Bao, Xu Chang, Jianjun Chen,Hao Deng,Ran Gao,Xun Gao, Lijuan Hu, Honghong Ji,Hsiang-Sheng Ku, Kannan Lu, Lu Ma, Liyong Mao,Zhijun Song,Hantao Sun,Chengchun Tang,Fei Wang, Hongcheng Wang,Tenghui Wang,Tian Xia,Make Ying, Huijuan Zhan, Tao Zhou, Mengyu Zhu, Qingbin Zhu,Yaoyun Shi,Hui-Hai Zhao,Chunqing Deng

PHYSICAL REVIEW LETTERS(2024)

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摘要
The fluxonium qubits have emerged as a promising platform for gate-based quantum information processing. However, their extraordinary protection against charge fluctuations comes at a cost: when coupled capacitively, the qubit-qubit interactions are restricted to XX interactions. Consequently, effective ZZ or XZ interactions are only constructed either by temporarily populating higher-energy states, or by exploiting perturbative effects under microwave driving. Instead, we propose and demonstrate an inductive coupling scheme, which offers a wide selection of native qubit-qubit interactions for fluxonium. In particular, we leverage a built-in, flux-controlled ZZ interaction to perform qubit entanglement. To combat the increased flux-noise-induced dephasing away from the flux-insensitive position, we use a continuous version of the dynamical decoupling scheme to perform noise filtering. Combining these, we demonstrate a 20 ns controlled-Z gate with a mean fidelity of 99.53%. More than confirming the efficacy of our gate scheme, this high-fidelity result also reveals a promising but rarely explored parameter space uniquely suitable for gate operations between fluxonium qubits.
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