Photoconduction Properties in Tungsten Disulfide Nanostructures.
Nanomaterials (Basel, Switzerland)(2023)
摘要
We reported the photoconduction properties of tungsten disulfide (WS) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400-4000 Wm). The WS photodetector exhibits superior performance with responsivity in the range of 36-73 AW and a normalized gain in the range of 3.5-7.3 10 cmV at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS nanostructures are of potential as a building block for novel optoelectronic device applications.
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关键词
tungsten disulfide nanostructures
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