A 10-bit 120MS/s SAR ADC using tri-switch sampling and VCM- stable switching scheme in 40-nm CMOS

IEICE ELECTRONICS EXPRESS(2023)

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摘要
A 10-bit 120MS/s successive-approximation-register (SAR) analog-to-digital converter (ADC) in 40-nm CMOS is presented. To diminish the fluctuation of common-mode voltage (VCM) and switching energy during conversion, a VCM-stable switching scheme is adopted without increasing the design complexity to V ???????????? buffers. Moreover, triswitch sampling is employed in this design. Together with the binary-scaled recombination weighting (BSRW) method, it cancels the gain error and non-linearity caused by the parasitic input capacitor of comparators. The measurement results show that the reported ADC achieves an ENOB of 9.3 bits sampled at 120MS/s. The worst differential non-linearity (DNL) and integrated non-linearity (INL) are both below 0.5 LSB. The proposed ADC consumes 1.08-mW power, resulting in a figure of merit (FoM) of 14.3 fJ/Conv.-step.
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关键词
SAR ADC, switching scheme, parasitic capacitor, INL, DNL
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