Analysis of plasma-elastic component of time-domain photoacoustic response

The plasma-elastic component of the photoacoustic response in the time-domain of thin semiconductor samples excited by long electromagnetic radiation pulses is analyzed in detail. The plasma-elastic component model assumes that ambipolar diffusion can be approximated by the minority carrier diffusion. The results obtained show that the plasma-elastic component in thin semiconductor samples affects photoacoustic measurements in the time domain, which is important for the photoacoustic determination of semiconductor electronic properties.