Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10 Ω.cm Contact Resistivity in Nonplanar FETs.
VLSI Technology and Circuits(2023)
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要
VLSI Technology and Circuits(2023)