Controllable growth α-In2Se3 flakes by chemical vapor deposition

•Controllable growth of α-In2Se3 flakes was achieved by using the developed confined-space modulated chemical vapor deposition (CVD) method.•α-In2Se3 flakes are preferred to be deposited on the inner surfaces of the confined space, while the α-In2Se3 flakes are mainly grown on the outer surfaces.•The grown α-In2Se3 flake possesses a large size of ∼60 μm, uniform thickness of ∼2.8 nm and distinct ferroelectric properties.