Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Bo Xu,Sha Yang,Yang Li,Hui Li,Zhao-Yuan Sun,Xue-Yin Sun,Jia Zhang,Jing-Kai Qin,Ping-An Hu,Liang Zhen,Wei Liu,Cheng-Yan Xu

Applied Surface Science（2023）

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摘要

•Effectively alleviating the SBH at TMDs/metal interfaces by inserting a 2D semiconductor InSe.•SBHs in n-type MoS2 and p-type WSe2 transistors were reduced from 156 to 33 meV and from 95 to 16 meV, respectively.•The effective thicknesses of inserted InSe flakes to lower the SBH are in the range of 4 ∼ 12 nm.

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关键词

Transition metal dichalcogenides,InSe,Schottky barrier,Fermi level pinning,DFT calculations

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