Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. The air-bridge source-connection was formed using the Direct Laser Writing Grayscale Photolithography, and it directly connected the two adjacent sources and spanned the gate and drain of the multi-finger p-GaN gate device, which featured the advantages of stable self-support and large-span capabilities. Verified by the experiments, the fabricated air-bridge p-GaN gate devices utilizing the Direct Laser Writing Grayscale Photolithography presented an on-resistance of 36 ?center dot mm, a threshold voltage of 1.8 V, a maximum drain current of 240 mA/mm, and a breakdown voltage of 715 V. The results provide beneficial design guidance for realizing large gate-width p-GaN gate high-electron-mobility transistor devices.