Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2023)
摘要
In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed time-dependent breakdown (TDB) and pulsed gate breakdown characteristics both featured a positive frequency dependence. At a gate bias of 10 V, the effective total lifetime extended from 170 s to 670 s with the switching frequency increased from 5 Hz to 10 kHz. By time-dependent electroluminescence (TDEL) characteristics on devices with semi-transparent gate electrodes, the high-energy ultraviolet emission increased at a higher switching frequency, indicating an enhanced hole injection into the p-GaN/AlGaN/GaN heterostructure. The enhanced hole injection annihilated more injected electrons, leading to the suppressed hot-electron effect, as well as the enhanced gate breakdown.
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关键词
p-GaN HEMTs,dynamic switching,enhanced gate breakdown,electroluminescence
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