Why Room Temperature GeSn Lasers Need Carbon

Tuhin Dey,Augustus W. Arbogast,Qian Meng,Shamim Reza,Aaron Muhowski,Joshua Cooper,Rachel S. Goldman,Thales Borrely,Seth R. Bank,Mark A. Wistey

2023 IEEE Silicon Photonics Conference (SiPhotonics)（2023）

引用 0|浏览7

暂无评分

摘要

Device models show GeSn lasers are limited by weak electron and photon confinement. Adding carbon offers strong conduction band offsets, freeing SiGeSn layers for separate confinement heterostructures, reducing thresholds. Photoluminescence from recent growths of GeC and GeSnC quantum wells will be presented.

查看译文

关键词

GeC, GeSn, silicon photonics, laser thresholds, laser modeling, optical mode, quantum well, highly mismatched alloys

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要