Germanium on Silicon Photodiodes for Back-End-Of-Line Photonic Integration

Ge-on-Si p-i-n photodiodes with graded boron doping were grown and annealed at low temperatures. Annealing improved diode characteristics, with the highest performing diode annealed at 500°C for 3hr, Responsivity = 0.15 A/W and Jd = 170 µA/cm ² at λ=1310nm, 0.5µm Ge, and no AR coating.