Twist-Dependent Intra- and Interlayer Excitons in Moire acute accent MoSe2 Homobilayers

Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire ' coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K -K and Gamma-K excitons accompanied by a transition from K -K to Gamma-K emission. Both effects can be traced back to the underlying moire ' pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire ' excitons. We identify two distinct intralayer moire ' excitons for R stacking, while H stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire ' exciton species.