Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies

The performance of CMOS transmitters and receivers operating at the submillimeter electromagnetic wave frequencies have sufficiently improved for use in active transmission and reflection-mode imaging applications that have the potential for broad deployment and utilization. Imaging integrated circuits have the potential to be large in area to support a high number of pixels along with digital backend processing circuits. For high volume imaging applications that may eventually be included in automobiles, smartphones, laptops, tablets, and others, a large manufacturing capacity to support the volume of large area ICs is necessary. For this, the use of CMOS technologies with a much larger manufacturing capacity is favored. It should be possible to improve the performance of CMOS circuits to increase the range, and operation margin and frequency. The electronically steerable submillimeter-wave reflector technology holds the promise for improving the performance and energy efficiency of submillimeter-wave imaging systems by multiple orders of magnitude, and it is a critical research area. Increasing the operating frequency from 430 to 850 GHz using CMOS integrated circuits to improve the angular resolution by 2X at a given form factor (similar to 0.15 degrees for a reflector diameter of 15 cm) can make the submillimeter-wave imaging competitive to the LIDAR angular-resolution performance, while providing superior capabilities in visually impaired conditions and making the imaging devices more affordable.