Technology/Memory Co-Design and Co-Optimization Using E-Tree Interconnect

For on-chip SRAM, a major portion of delay and energy is contributed by the H-Tree interconnects. In this paper, we propose an E-Tree interconnect technology to minimize the H-Tree delay and energy overheads based on an efficient interconnect technology/memory co-design framework for nonuniform workloads. Various array- and interconnect-level design parameters are co-designed for optimal performance using three emerging interconnect materials with a realistic cell library.