Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).

Ferroelectricity in doped HfO2 thin films was reported for the first time 12 years ago, generating strong interest in the non-volatile memory and logic community. Thanks to their CMOS compatibility and potential for scaling, hafnia- based Ferroelectric Random Access Memories (FeRAMs), Ferroelectric Tunnel Junctions (FTJs) and Ferroelectric Field Effect Transistors (FeFETs) are not only a breakthrough with respect to conventional perovskite-based ferroelectric (FE) devices but also potentially a revolution from an application prospective, in particular considering the non-volatility and intrinsic energy efficiency of these devices. However, their maturity is currently too low to consider practical applications. In this paper, we therefore focus on the reliability assessment of Metal/FE/Metal (MFM) and Metal/FE/Dielectric/Metal (MFDM) stacks, either in the form of large area ferroelectric capacitors, or in the form of kbit arrays integrated in CMOS Back-End of Line.