Light emission and engineered carrier lifetime in strained 2D materials towards developing wavelength-tunable integrated emitters

The photonics-based approach has recently become a strong candidate for realising a large-scale, practical quantum processor. Particularly in recent years, two-dimensional (2D) materials have become a strong candidate for developing an ideal integrated light source owing to their several unique advantages such as convenient on-chip integration. In this work, we study the effect of strain on the emission wavelength and carrier lifetime. We first show that the geometry of stressors can adjust the amount of strain and emission wavelength. Using this strain engineering technique, we demonstrate that the emission wavelength can be significantly shifted by similar to 10 nm while the carrier lifetime can also be engineered by similar to 30 %.