The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology.

The synergetic effects of high temperature and total ionizing dose effects of H-gate DSOI are investigated under the TG-state bias condition. The comparative irradiation experiments are subjected to identify the synergetic effects by separating pure-temperature and pure-irradiation effects. Furthermore, the mitigated TID responses with/without back-gate compensation are discussed. The results show that synergetic effects make threshold voltage degradation weaken for our devices with the V-SOI2 = 0 V during testing. It can be explained that the electrons will be more likely to tunnel into the oxides and compensate the trapped charges with temperature rising. Besides, with the V-SOI2 = -10 V, the common TID mitigation was observed under room temperature and the synergetic effects can still be greatly compensated due to the electric field lines induced by positive trapped charges terminating into the negatively biased electrode. It may enlighten us the high TID tolerance of DSOI can be achieved in very harsh environments.